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  d a t a sh eet product speci?cation supersedes data of september 1994 file under integrated circuits, ic01 1996 jun 18 integrated circuits tea6810v; TEA6811V front-end and pll synthesizers for car radios
1996 jun 18 2 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V features synthesizer function which includes a voltage controlled oscillator (vco), dividers, phase detector, charge-pump and in-lock detector fm mixer with agc am rf amplifier with agc am mixer. applications car radios. general description the tea6810v and TEA6811V, together with tea6821v forms an am/fm receiving concept for electronically tuned car radios. the tea681xv is an fm/am front-end with one local synthesized oscillator for both am and fm which is used together with the tea6821t in a double-conversion concept. it delivers a first fm-if of 72.2 mhz and, for mw/lw, a first am-if of 10.7 mhz. minimum alignments are required due to wideband rf inputs and the common am/fm vco. high dynamic behaviour and minimum distortion is obtained by a special rf input design combined with agc. high sensitivity is possible in combination with rf input fets. minimum interference is experienced due a to special synthesizer loop design and ensuring that the i 2 c-bus is inoperative in the locked-tuned condition. the reference frequency for the synthesizer and the i 2 c-bus information is delivered by the tea6821v. the programmable local/dx switch enables switching the gain of the fm mixer from normal agc control (fm dx) to the forced 4th level of agc (fm local). quick reference data ordering information symbol parameter conditions min. typ. max. unit v cca1 analog supply voltage (pin 2) 4.75 5.0 5.25 v v cca2 analog supply voltage (pin 13) 8.1 8.5 8.9 v v amant am agc range see fig.4 0.3 - 6.0 v v fmant fm agc range see fig.5 10 - 600 mv f amant am input frequency 0.144 - 22 mhz f fmant fm input frequency 60 - 108 mhz t amb operating ambient temperature - 40 - +85 c type number package name description version tea6810v vso40 plastic very small outline package; 40 leads sot158-1 TEA6811V vso40 plastic very small outline package; 40 leads; face down sot158-2
1996 jun 18 3 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V block diagram n dbook, full pagewidth mge727 am/fm oscillator pin diode driver lock detector charge pump programme divider n1 band gap fm am rf am/fm am/fm am/fm tea6810v TEA6811V am/fm buffer oscgnd oscfdb osctnk ipidio fmrfip fmrfin fmifon fmifop amprec amsb2 amsb1 amprei fmagcc amagcc v ccosc fmagc ref buffer i 2 c-bus control phase detector n2 am 36 35 37 38 34 32 30 31 11 12 33 27 28 25 24 26 ampreo ammin v ref 22 18 19 15 9 8 4 5 20 10 23 17 2 7 6 1 agnd1 n.c. n.c. n.c. n.c. scl sda dgnd ammop ammon ammgnd rfgnd v ccd f refn f refp v cca1 v tune v cca2 chpout lckdet agnd2 14 13 3 40 39 16 21 29 fig.1 block diagram.
1996 jun 18 4 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V pinning symbol pin (1) description tea6810 tea6811 agnd1 1 1 analog ground 1 v cca1 2 2 analog supply voltage 1 (+5 v) lckdet 3 3 lock detector ?ag sda 4 4 serial data input/output; i 2 c-bus scl 5 5 serial clock input; i 2 c-bus f refn 6 6 reference frequency input from tea6821 n-terminal f refp 7 7 reference frequency input from tea6821 p-terminal dgnd 8 8 digital ground v ccd 9 9 digital supply voltage (+5 v) n.c. 10 10 not connected fmifon 11 11 fm mixer negative output (72.2 mhz) fmifop 12 12 fm mixer positive output (72.2 mhz) v cca2 13 13 analog supply voltage 2 (+8.5 v) agnd2 14 14 analog ground 2 ammop 15 15 am mixer positive output (10.7 mhz) ammon 16 16 am mixer negative output (10.7 mhz) n.c. 17 17 not connected ammin 18 18 am mixer rf input v ref 19 19 reference voltage output from am band gap n.c. 20 20 not connected ammgnd 21 21 am mixer ground ampreo 22 22 am preampli?er output n.c. 23 23 not connected amsb1 24 24 am feedback switch sb1 amsb2 25 25 am feedback switch sb2 amprei 26 26 am preampli?er input amagcc 27 27 am agc capacitor amprec 28 28 am preampli?er decoupling capacitor rfgnd 29 29 rf ground fmrfip 30 30 rf positive input for fm mixer fmrfin 31 31 rf negative input for fm mixer ipidio 32 32 pin diode drive fmagcc 33 33 fm agc integrating capacitor fmagc ref 34 34 fm agc reference voltage oscfdb 35 35 oscillator feedback input oscgnd 36 36 oscillator ground osctnk 37 37 oscillator tank output
1996 jun 18 5 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V note 1. pins 10, 17, 20 and 23 should be connected to a common ground. v ccosc 38 38 oscillator supply voltage (+8.5 v) v tune 39 39 tuning voltage chpout 40 40 charge pump output symbol pin (1) description tea6810 tea6811
1996 jun 18 6 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V fig.2 pin configuration (tea6810). handbook, halfpage tea6810v mge725 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 chpout v tune v ccosc osctnk oscgnd oscfdb fmagc ref fmagcc ipidio fmrfin fmrfip rfgnd amprec amagcc amprei amsb2 amsb1 n.c. ampreo ammgnd agnd1 v cca1 lckdet sda scl f refn f refp dgnd v ccd n.c. fmifon fmifop v cca2 agnd2 ammop ammon n.c. ammin v ref n.c. fig.3 pin configuration (tea6811). handbook, halfpage TEA6811V mge726 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 chpout v tune v ccosc osctnk oscgnd oscfdb fmagc ref fmagcc ipidio fmrfin fmrfip rfgnd amprec amagcc amprei amsb2 amsb1 n.c. ampreo ammgnd agnd1 v cca1 lckdet sda scl f refn f refp dgnd v ccd n.c. fmifon fmifop v cca2 agnd2 ammop ammon n.c. ammin v ref n.c.
1996 jun 18 7 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V i 2 c-bus organization the tea6810v; TEA6811V is controlled via the i 2 c-bus which is driven from the tea6821v. for programming purposes a module address and four data bytes are required. when used partially, the transmission must be ended by a stop condition. table 1 bit organization table 2 i 2 c-bus address and received bytes notes 1. n1 divider ratio is (n + 2); where n is the programmed binary number composed of bytes 1 and 2. for the minimum ratio; if n < 2048 then n1 divider ratio is {2048 + (n - 2)}. 2. x = dont care. start module address programmable divider data switch control test stop s byte 0 a byte 1 a byte 2 a byte 3 a byte 4 a p bytes to be received (4 bytes) bus address msb lsb 11000100 byte 1 (1) program divider n1 (low byte) s7 s6 s5 s4 s3 s2 s1 s0 byte 2 (1) program divider n1 (high byte) s15 s14 s13 s12 s11 s10 s9 s8 byte 3 switching msb in-lock counter lsb in-lock counter 1 = high 0 = low current tuning oscillator 1 = high 0 = low current charge pump 1=fm local 0 = fm dx msb divider n2 lsb divider n2 1=fm 0=am byte 4 testing 1 = 3-state 0 = normal charge pump 1=f div 0 = lckdet 1 = test 0 = normal in-lock counter x (2) xx x x table 3 n2 divider n2 divider msb lsb 300 501 10 1 0 15 1 1 table 4 in-lock in-lock msb lsb am/fm 800fm 16 1 0 am or fm 32 1 1 am or fm 48 0 0 am 64 0 1 am
1996 jun 18 8 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V limiting values in accordance with the absolute maximum rating system (iec 134). note 1. machine model: equivalent to discharging a 200 pf capacitor through 0 w . handling inputs and outputs are protected against electrostatic discharge in normal handling. however, to be totally safe, it is desirable to take normal precautions appropriate to handling mos devices. thermal characteristics dc characteristics v 13 =v 38 = 8.5 v; v 9 =v 2 = 5.0 v; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. max. unit v cca1 analog supply voltage (pin 2) - 0.3 12 v v cca2 analog supply voltage (pin 13) - 0.3 12 v v ccd digital supply voltage (pin 9) - 0.3 12 v v ccosc oscillator supply voltage (pin 38) - 0.3 12 v p tot maximum power dissipation - 0.55 w t stg storage temperature - 65 +150 c v es electrostatic handling note 1 - 300 +300 v symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air 90 k/w symbol parameter conditions typ. max. unit i cca1 analog input current (pin 2) am mode 7 9 ma fm mode 6 8 ma i cca2 analog input current (pin 13) am mode 17 22 ma fm mode 15 18 ma i ccosc oscillator input current (pin 38) am mode 4 6 ma fm mode 6 8 ma i ccd digital input current (pin 9) am mode 32 35 ma fm mode 27 30 ma i ammo am mixer output current (pins 15 and 16) am mode 8.5 - ma fm mode 0 - ma i fmifo fm mixer output current (pins 11 and 12) am mode 0 - ma fm mode 10 - ma
1996 jun 18 9 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V ac characteristics all voltage and current values are rms values; noise values are unweighted within the bandwidth 0.03 to 20 khz; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit am signal channel; (note 1; see fig.4) rf preamplifier stage z 21 transimpedance 40 65 - k w agc stage ; f i 2 =1mh z v i2 hf input voltage agc start level 1 - 750 - mv agc start level 2 - 850 - mv agc stop level 1 - 145 - mv agc stop level 2 - 170 - mv i agcsink agc sink current v 18 =v 19 + 0.5 v; v 27 =v 19 - 1 -m a i agcsource agc source current v 18 =v 19 - 0.5 v; v 27 =v 19 - 2 - ma m ixer (f o = 10.7 mh z ) r i input resistance between pins 18 and 21 15 (2) 20 - k w c i input capacitance between pins 18 and 21 - 5 - pf c o output capacitance between pins 15 and 16 -- 5 (2) pf g mc conversion transconductance (i 15 to i 16 /v 18 to v 19 2.4 2.75 3.1 ms d g mc variation in conversion transconductance -- 0.005 - ms/k ip 3 third-order intermodulation 130 (2) 137 - dbmv cp - 1 db compression point 114 (2) 120 - dbmv v n(eq) equivalent input noise voltage - 9 - nv/ ? hz o scillator /n2 divider r n2 internal divider ratio (n2) set by i 2 c-bus; see table 3 - 15 - - 10 - - 5 - - 3 - r eference voltage ( pin 19) v o output reference voltage - 2.75 - v z o output impedance - 40 -w i o(max) maximum output current -- 0.1 ma
1996 jun 18 10 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V fm signal channel (note 3; see fig.5) m ixer r i input resistance between pins 30 and 31 1.65 (2) 2 - k w c i input capacitance between pins 30 and 31 3.4 (2) 4 4.5 (2) pf r o output resistance between pins 11 and 12 10 -- k w c o output capacitance between pins 11 and 12 6.5 (2) 89 (2) pf g m transconductance i 11 to i 12 /v 30 to v 31 v agc3 - 1.0 - ms d g m t variation in transconductance with temperature 1996 jun 18 11 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V s ynthesizer (see fig.6) reference frequency input (pins 6 and 7) v ref(p-p) reference frequency input voltage (v 6 to v 7 ) (peak-to-peak value) - 0.4 - v t trans reference frequency transition time -- 50 ns f ref input reference frequency for: tuning step (khz) n2 fm 50 -- 50 - khz am standard sw1 5 10 - 50 - khz am full-band mw (usa) 10 5 - 50 - khz fm 25 -- 25 - khz am full-band sw1 5 5 - 25 - khz am standard mw/lw 1 15 - 15 - khz am full-band mw/lw 3 5 - 15 - khz am full-band sw2 5 3 - 15 - khz fm 10 -- 10 - khz am standard sw1 1 10 - 10 - khz am full-band mw/lw 1 5 - 5 - khz am full-band sw1 1 5 - 5 - khz am full-band sw2 1 3 - 5 - khz phase detector/charge pump i ol low level output charge pump current v 40 = 4 v 120 175 215 m a i oh high level output charge pump current v 40 = 4 v 0.85 1 1.2 ma v ol low level tuning voltage at charge pump low i o = 0.5i charge ; v 13 = 8.5 v 0.2 - 8.25 v v oh high level tuning voltage at charge pump high i o = 0.5icharge; v13 = 8.5 v 0.4 - 8.0 v i oz 3-state output current v 40 =4v - 5 - +5 na d f r(p-p) residual fm frequency (peak-to-peak value) b = 300 hz to 20 khz; i charge =i ol ; f i = 100 mhz - 916 (2) hz t lock lock time fm = 88 to 108 mhz - 2 - ms fm = 108 to 88 mhz - 2 - ms am = 510 to 1710 khz - 2 - ms am = 1710 to 510 khz - 2 - ms symbol parameter conditions min. typ. max. unit
1996 jun 18 12 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V notes 1. f i1 = 1053 khz; f mod = 400 hz; m = 0.3; v i1 =v i2 = 1 mv; n2 divider switched to divide-by-15. 2. not measured 100% in production. 3. v i1 = 1 mv; f i1 = 98 mhz; f mod = 1 khz; d f= 22.5 khz. programmable divider n min minimum programmable ratio - 2 050 - n max maximum programmable ratio - 65537 - dr divider ratio for: tuning step (khz) n2 fm 50 - 2050 - 3 604 fm 25 - 6388 - 7208 fm 10 - 15970 - 18020 fm 5 - 31940 - 36040 am standard mw/lw 1 15 10844 - 12420 am standard sw1 5 10 3320 - 4140 am standard sw1 1 10 16600 - 20700 am full-band mw/lw 3 5 10448 - 10973 am full-band mw/lw 1 5 31344 - 32920 am full-band sw1 5 5 6700 - 8240 am full-band sw1 1 5 33500 - 41200 am full-band sw2 5 3 8240 - 10640 am full-band sw2 1 3 41200 - 53200 am full-band mw (usa) 10 5 3172 - 3292 in-lock detector (reset by any start condition on i 2 c-bus) v oh in-lock high level output voltage (pin 3) 4.0 - 5.0 v v ol in-lock low level output voltage (pin 3) 0 - 0.4 v t d in-lock delay counter length = n - n 1 fref - ms symbol parameter conditions min. typ. max. unit
1996 jun 18 13 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V fig.4 am test circuit. handbook, full pagewidth mlb828 am rf agc am 10 k w 20 k w 50 w 50 w 20 k w 10 k w 26 24 22 18 19 25 28 27 35 37 36 38 29 4.7 nf 1.8 pf 2.7 pf 33 m f 1.5 m f 21 16 15 13 12 9845 v i1 50 w 50 w v i2 v ref v o1 v o2 v tune 8.5 v v ccosc 8.5 v v cca2 5 v v ccd am/fm oscillator 50 nh bb515 1 nf 10 k w n2 band gap am/fm am/ fm am/ fm 10 nf 1 mh 33 m h 200 w 100 nf 33 m f i c bus control 2 10 k w 10 k w 100 nf sda scl tea6810v TEA6811V 22 nf 1:1 33 m f
1996 jun 18 14 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V fig.5 fm test circuit. handbook, full pagewidth mlb829 fm agc pin diode drive buffer 31 33 30 34 32 35 37 36 38 29 1.6 pf 2.7 pf 11 12 13 14 50 w 50 w v i1 75 w v o3 v o2 v o1 v tune 8.5 v v ccosc 8.5 v v cca2 am/fm oscillator 50 nh bb515 1 nf 10 k w 1 w 1 mh 1 k w 100 nf 33 m f 9845 5 v v ccd am/fm i c bus control 2 10 k w 10 k w 100 nf 100 nf sda scl tea6810v TEA6811V 56 pf 50 w f i1
1996 jun 18 15 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V fig.6 synthesizer test circuit. handbook, full pagewidth mlb830 charge pump 40 39 13 2 1 14 5 v v cca1 0.4 v (p p) 35 37 36 38 1.8 pf 2.7 pf v o1 v iref v 8.5 v ccosc am/fm oscillator 50 nh bb515 1 nf 12 nf 120 nf 3.3 nf 2.2 k w 3.6 k w 10 k w 1 w 8 pf 9845 3 5 v v ccd i c bus control 2 phase detector program divider n1 buffer lock detector 10 k w 10 k w 1.2 k w 1.2 k w 100 nf sda scl tea6810v TEA6811V
1996 jun 18 16 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V internal pin configuration fig.7 internal pin configuration. handbook, full pagewidth mge728 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 chpout v tune v ccosc osctnk oscgnd oscfdb fmagc ref fmagcc ipidio fmrfin fmrfip rfgnd amprec amagcc amprei amsb2 amsb1 n.c. ampreo ammgnd agnd1 v cca1 lckdet sda scl f refn f refp dgnd v ccd n.c. fmifon fmifop v cca2 agnd2 ammop ammon n.c. ammin v ref n.c. tea6810v TEA6811V
1996 jun 18 17 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V application information d book, full pagewidth mge729 10 k w 1 k w 1 k w 10 k w 50 k w 50 w 5 k w 20 k w 2.2 m f 10 m f 47 m f tea6810v TEA6811V hef4060b 1 2 3 4 5 6 7 8 9 100 nf 100 nf 10 nf 1 mh 10 11 12 13 14 15 16 9 10 6.4 mhz 50 khz 11 12 13 14 15 16 v ss v cca1 v ccd v tune fmagc ref fmagcc ipidio fmin amagcc amprei amsb2 amsb1 ampreo osctnk dgnd 1 mh 3.3 nf 120 nf 1 mh v cca2 o3 o6 o4 o5 tr4 tr3 tr2 tr1 fmout amout ammin anzac tp103 anzac tp103 anzac tp101 4.7 nf 4.7 nf 4.7 nf 4.7 nf 220 nf o13 o12 o11 8 7 6 5 4 3 2 1 ctc lckdet sda scl rtc rs mr o8 o7 o9 v dd 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 1 k w 1 k w 1 k w 1 k w 22 k w 1 k w 1 k w 1 k w 10 k w 100 w 100 w 100 w 50 w 100 w 10 k w 10 k w 3.6 k w 2.2 k w 12 nf 100 nf 1 nf 1.8 pf 1 pf 2.7 pf 120 nf 120 nf 1 nf 1 nf 50 nh 47 k w 470 k w 100 k w 100 w 47 m f 47 m f 47 m f 47 m f 47 m f 47 pf 12 pf 12.5 khz 150 nf fig.8 test board diagram.
1996 jun 18 18 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V package outlines unit a 1 a 2 a 3 b p cd (1) e (2) z (1) eh e ll p qy w v q references outline version european projection issue date iec jedec eiaj mm inches 0.3 0.1 2.45 2.25 0.25 0.42 0.30 0.22 0.14 15.6 15.2 7.6 7.5 0.762 2.25 12.3 11.8 1.15 1.05 0.6 0.3 7 0 o o 0.1 0.1 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.4 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 1.7 1.5 sot158-1 92-11-17 95-01-24 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a y 40 20 21 1 pin 1 index 0.012 0.004 0.096 0.089 0.017 0.012 0.0087 0.0055 0.61 0.60 0.30 0.29 0.03 0.089 0.48 0.46 0.045 0.041 0.024 0.012 0.004 0.2 0.008 0.004 0.067 0.059 0.010 0 5 10 mm scale vso40: plastic very small outline package; 40 leads sot158-1 a max. 2.70 0.11
1996 jun 18 19 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V unit a 1 a 2 a 3 b p cd (1) e (2) eh e ll p qy w v q references outline version european projection issue date iec jedec eiaj mm inches 0.3 0.1 2.45 2.25 0.25 0.42 0.30 0.22 0.14 15.6 15.2 7.6 7.5 0.762 12.3 11.8 1.15 1.05 0.6 0.3 7 0 o o 0.1 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.4 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 1.7 1.5 sot158-2 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a y 40 21 20 1 pin 1 index 0.012 0.004 0.096 0.089 0.017 0.012 0.0087 0.0055 0.61 0.60 0.30 0.29 0.03 2.25 0.089 0.48 0.46 0.045 0.041 0.024 0.012 0.004 0.2 0.008 0.004 0.067 0.059 0.010 z (1) 0 5 10 mm scale 92-11-17 95-01-24 vso40: plastic very small outline package; 40 leads; face down sot158-2 a max. 2.70 0.11
1996 jun 18 20 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all vso packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering wave soldering techniques can be used for all vso packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1996 jun 18 21 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. purchase of philips i 2 c components data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. purchase of philips i 2 c components conveys a license under the philips i 2 c patent to use the components in the i 2 c system provided the system conforms to the i 2 c specification defined by philips. this specification can be ordered using the code 9398 393 40011.
1996 jun 18 22 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V notes
1996 jun 18 23 philips semiconductors product speci?cation front-end and pll synthesizers for car radios tea6810v; TEA6811V notes
internet: http://www.semiconductors.philips.com/ps/ (1) address content source april 6, 1998 philips semiconductors C a worldwide company ? philips electronics n.v. 1996 sca49 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 83749, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 926 5361, fax. +7 095 564 8323 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220 - 5th floor, suite 51, cep: 04552-903-s?o paulo-sp, brazil, p.o. box 7383 (01064-970), tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips taiwan ltd., 23-30f, 66, chung hsiao west road, sec. 1, p.o. box 22978, taipei 100, tel. +886 2 382 4443, fax. +886 2 382 4444 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine: philips ukraine, 2a akademika koroleva str., office 165, 252148 kiev, tel. +380 44 476 0297/1642, fax. +380 44 476 6991 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 708 296 8556 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 825 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 805 4455, fax. +61 2 805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 708 296 8556 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 1949 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 615 800, fax. +358 615 80920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 52 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros, tel. +30 1 4894 339/911, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 648 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +1 800 234 7381, fax. +1 708 296 8556 middle east: see italy printed in the netherlands 517021/02/pp24 date of release: 1996 jun 18 document order number: 9397 750 00916


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